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  savantic semiconductor product specification silicon npn power transistors 2SC1828 description with to-66 package continuous collector current-i c =1a power dissipation ?p c =40w @t c =25  applications for power amplifier applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 800 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 6 v i c collector current 1 a p t total power dissipation t c =25 40 w t j junction temperature 150  t stg storage temperature -55~150  fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC1828 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 400 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 800 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 6 v v cesat collector-emitter saturation voltage i c =1a; i b =0.2a 1.0 v v besat base-emitter saturation voltage i c =1a; i b =0.2a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 0.1 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe dc current gain i c =0.2a ; v ce =10v 30 200 f t transition frequency i c =0.1a ; v ce =10v 10 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2SC1828 package outline fig.2 outline dimensions


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